International Conference on

Graphene and Semiconductors

July 17-18, 2017

The Rising Era of Graphene

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Yung Woo Park

Seoul National University, South Korea

Title: Manipulation of electrical properties in CVD-grown twisted bilayer Graphene induced by dissociative hydrogen adsorption

Biography

Biography: Yung Woo Park

Abstract

The effect of hydrogen adsorption on twisted bilayer graphene (tBLG) was studied. Raman spectroscopy and the electrical transport properties (electrical resistance and thermoelectric power) confirm that the electron doping by hydrogen adsorption, in agreement with the previous report involving exfoliated bilayer graphene (BLG). Common electron doping behavior were observed at various twist angles (0^o, 5^o, 12.5^oand 30^o), and the adsorptions follow the first–order Langmuir-type adsorption model. Specifically, we analyzed the off-state currents, with band-gap openings of around 13 meV in tBLG with twist angle of 0^o, as in Bernal-stacked BLG.