Irina V Antonova
Institute of Semiconductor Physics, Russia
Biography
Irina V Antonova graduated from Department of Physics and Engineering, Novosibirsk State Technical University in 1979. Since 1981, she has been working in the Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Science. Presently, she occupies a leading Researcher Position at the Institute of Semiconductor Physics and heads a group of researchers who deal with investigation of graphene and its derivatives. Her activity was connected with transport and recharging phenomena in nanocomposite layers (Si, Ge nanocrystals in dielectric matrix), and localized states in heterostructures (SOI, quantum wells and quantum dots), high-pressure-related effects and surface passivation phenomena. The scope of her current research includes chemical functionalization of graphene, fabrication of graphene-based heterostructures and arrays of graphene quantum dots embedded in a fluorographene matrix, transport and recharging phenomena in nanocomposite layers. She has above 240 papers.
Abstract
Abstract : Graphene/fluorinated graphene systems for a wide spectrum of applications